View PHB119NQ06T_4744206.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PHB119NQ06T
N-channel TrenchMOS standard level FET
Rev. 02 -- 15 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors General industrial applications Motors, lamps and solenoids Uninterruptible power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj 25 C; Tj 175 C Tmb = 25 C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 C; see Figure 2 Min Typ Max Unit 55 75 200 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 9; see Figure 10 5.8 7.1 m
Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 C; see Figure 11 17 nC
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Table 3. Ordering information Package Name PHB119NQ06T D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current VGS = 10 V; Tmb = 100 C; see Figure 1 VGS = 10 V; Tmb = 25 C; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C VGS = 10 V; Tj(init) = 25 C; ID = 75 A; Vsup 55 V; unclamped; tp = 0.1 ms; RGS = 50
All information provided in this document is subject to legal disclaimers.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj 25 C; Tj 175 C Tj 25 C; Tj 175 C; RGS = 20 k Min -20 -55 -55 Typ Max 55 55 20 75 75 240 200 175 175 75 240 280 Unit V V V A A A W C C A A mJ
tp 10 s; pulsed; Tmb = 25 C; see Figure 3 Tmb = 25 C; see Figure 2
Source-drain diode
Avalanche ruggedness
PHB119NQ06T
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
2 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
120 Ider (%) 80
03ap37
120 Pder (%) 80
03aa16
40
40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
103 ID (A) 102 Limit R DSon = VDS /ID
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
03ap30
t p = 10 s
1 ms
DC 10
10 ms 100 ms 1s
1 1 10 VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
3 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 Min Typ Max 0.75 Unit K/W
Rth(j-a)
mounted on a printed-circuit board ; minimum footprint
-
50
-
K/W
1
03ap29
Zth(j-mb) (K/W)
= 0.5 0.2
10-1
0.1 0.05 0.02
single pulse
P = tp T
tp
t T
10-2 10-4
10-3
10-2
10-1 tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
4 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 A; VGS = 0 V; Tj = -55 C ID = 250 A; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 7; see Figure 8 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 7; see Figure 8 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 7; see Figure 8 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 55 V; VGS = 0 V; Tj = 25 C VDS = 55 V; VGS = 0 V; Tj = 175 C VGS = 20 V; VDS = 0 V; Tj = 25 C VGS = -20 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 9; see Figure 10 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 9; see Figure 10 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 13 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ; Tj = 25 C VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 12 ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 C; see Figure 11 53 12.3 17 2820 554 200 24 52 77 41 0.85 62 60 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC Min 50 55 1 2 Typ 3 2 2 10.6 5.8 Max 4.4 4 1 500 100 100 14.2 7.1 Unit V V V V V A A nA nA m m
Static characteristics
Source-drain diode
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
5 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
240 Tj = 25 C ID (A) 160
03ap31
10 V 9 V
8.5 V 8V
75 ID (A) 50 VDS > ID x R DSon
03ap33
7V
80
6V
25 Tj = 175 C 25 C
VGS = 5 V 0 0 1 2 3 VDS (V) 4 0
0
2
4
VGS (V)
6
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
5
03aa32
Fig 6.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
03aa35
10-1 ID (A)
VGS(th) (V) 4 max
10-2
min
typ
max
3
typ
10-3
2
min
10-4
1
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 2 4 VGS (V) 6
Fig 7.
Gate-source threshold voltage as a function of junction temperature
Fig 8.
Sub-threshold drain current as a function of gate-source voltage
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
6 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
20 R DSon (m) 15 Tj = 25 C VGS = 7.5 V
03ap32
2 a 1.5
03ne89
8V
8.5 V 10 9V 10 V
1
5
0.5
0
0
80
160
I D (A)
240
0 -60
0
60
120
Tj (C)
180
Fig 9.
Drain-source on-state resistance as a function of drain current; typical values
10
03ap36
Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature
104 C (pF) C iss
03ap35
VGS (V) 8
ID = 25 A Tj = 25 C
14 V 6
VDD = 44 V 103
4 C oss 2 C rss 0 0 20 40 QG (nC) 60 102
10-1
1
10 VDS (V)
102
Fig 11. Gate-source voltage as a function of gate charge; typical values
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
7 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
75 IS (A) 50 VGS = 0 V
03ap34
25 175 C Tj = 25 C
0 0 0.3 0.6 0.9 VSD (V) 1.2
Fig 13. Source current as a function of source-drain voltage; typical values
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
8 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 05-02-11 06-03-16
Fig 14. Package outline SOT404 (D2PAK)
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
9 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history Release date 20100415 Data sheet status Product data sheet Change notice Supersedes PHP_PHB119NQ06T-01 Document ID PHB119NQ06T_2 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Typenumber PHB119NQ06T separated from data sheet PHP_PHB119NQ06T-01. Product data -
PHP_PHB119NQ06T-01 20040505 (9397 750 13176)
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
10 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
9.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 02 -- 15 April 2010
11 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PHB119NQ06T
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 15 April 2010
12 of 13
NXP Semiconductors
PHB119NQ06T
N-channel TrenchMOS standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 April 2010 Document identifier: PHB119NQ06T

▲Up To Search▲

Price & Availability of PHB119NQ06T

	To Download PHB119NQ06T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .